FCD380N60E
Description
® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Key Features
- 650 V @TJ = 150°C
- Max. RDS(on) = 380 mΩ
- Ultra Low Gate Charge (Typ. Qg = 34 nC)
- Low Effective Output Capacitance (Typ. Coss.eff = 97 pF)
- 100% Avalanche Tested
