FCD380N60E mosfet equivalent, n-channel mosfet.
* 650 V @TJ = 150°C
* Max. RDS(on) = 380 mΩ
* Ultra Low Gate Charge (Typ. Qg = 34 nC)
* Low Effective Output Capacitance (Typ. Coss.eff = 97 pF)
* 100.
® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced tech.
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